Electro-optical filters and modulators based on intersubband processes in InAs-GaSb-AlSb-family double quantum wells

被引：0

作者：

Meyer, JR ^{[1
]}

Hoffman, CA ^{[1
]}

Bartoli, FJ ^{[1
]}

RamMohan, LR ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,WORCESTER,MA 01609

来源：

NARROW GAP SEMICONDUCTORS 1995 | 1995年 / 144期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We discuss a new family of electro-optical intensity and phase modulators based on normal-incidence intersubband transitions in GaSb-based asymmetric double quantum wells. An applied electric field transfers the electron population from Gamma-valley states to L-valley states, thereby radically altering the resonance energies, strength and polarization dependences of the optical matrix elements, and in-plane effective masses which govern the plasma contribution to the dielectric constant.

引用

页码：330 / 334

页数：5