Electro-optical filters and modulators based on intersubband processes in InAs-GaSb-AlSb-family double quantum wells

被引：0
|
作者：
Meyer, JR [1 ]
Hoffman, CA [1 ]
Bartoli, FJ [1 ]
RamMohan, LR [1 ]
机构：
[1] WORCESTER POLYTECH INST,WORCESTER,MA 01609
来源：
NARROW GAP SEMICONDUCTORS 1995 | 1995年 / 144期
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We discuss a new family of electro-optical intensity and phase modulators based on normal-incidence intersubband transitions in GaSb-based asymmetric double quantum wells. An applied electric field transfers the electron population from Gamma-valley states to L-valley states, thereby radically altering the resonance energies, strength and polarization dependences of the optical matrix elements, and in-plane effective masses which govern the plasma contribution to the dielectric constant.
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页码：330 / 334
页数：5
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