STRUCTURAL ASPECTS OF STRAINED LAYERS .1. APPLICATION OF THE FRANK-BILBY EQUATION TO EPITAXIAL LAYERS

被引：7
|
作者：
BEANLAND, R
机构：
[1] The Department of Materials Science and Engineering, The University of Liverpool, Liverpool, L69 3BX
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1993年 / 67卷 / 03期
关键词：
D O I：
10.1080/01418619308207179
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new form of the Frank-Bilby equation is developed which is particularly suitable for application to epitaxial layers. The equation relates the deformation of an elastic material to the interfacial dislocation content. By applying an elastic boundary condition, the full deformation of a strained epitaxial layer can be obtained. Several examples are considered, relating to growth of coherent and semicoherent cubic semiconductor layers on exact and offcut (001) cubic semiconductor substrates. Although the emphasis of the paper is toward semiconductor layers, it is applicable to any epitaxial system.
引用
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页码：585 / 603
页数：19
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