HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICON

被引：48
|
作者：
POHORYLES, B
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 67卷 / 01期
关键词：
D O I：
10.1002/pssa.2210670152
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：K75 / K80
页数：6
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