SPATIAL CONTROLLABILITY OF PERIODIC RIPPLE STRUCTURES GENERATED IN LASER ETCHING OF N-GAAS

被引：8

作者：

KUMAGAI, H ^{[1
]}

EZAKI, M ^{[1
]}

TOYODA, K ^{[1
]}

OBARA, M ^{[1
]}

机构：

[1] KEIO UNIV,FAC SCI & TECHNOL,DEPT ELECT ENGN,KOHOKU KU,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

SURFACE ELECTROMAGNETIC WAVE; LASER ETCHING; HOLOGRAPHIC EXPOSURE; SURFACE RIPPLES; GAAS;

D O I：

10.1143/JJAP.31.4433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatial controllability of periodic ripple structures was investigated in laser etching of n-GaAs. For single-beam etching and holographic etching with high ratios of average spacing of holographic grating to average spacing of ripple structures (LAMBDA(h)/LAMBDA(h)), ripple structures were observed. In particular, in p-polarization, spatial fluctuation was greater than that in s-polarization. This might occur because phase distortion cannot be eliminated by p-polarization beam irradiation. For holographic etching with small LAMBDA(h)/LAMBDA(r) ratios, ripple structures were changed into grating structures because these grating structures might be generated in phase with holographic gratings.

引用

页码：4433 / 4436

页数：4

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