SPATIAL CONTROLLABILITY OF PERIODIC RIPPLE STRUCTURES GENERATED IN LASER ETCHING OF N-GAAS

被引：8
|
作者：
KUMAGAI, H [1 ]
EZAKI, M [1 ]
TOYODA, K [1 ]
OBARA, M [1 ]
机构：
[1] KEIO UNIV,FAC SCI & TECHNOL,DEPT ELECT ENGN,KOHOKU KU,YOKOHAMA,KANAGAWA 223,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期
关键词：
SURFACE ELECTROMAGNETIC WAVE; LASER ETCHING; HOLOGRAPHIC EXPOSURE; SURFACE RIPPLES; GAAS;
D O I：
10.1143/JJAP.31.4433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spatial controllability of periodic ripple structures was investigated in laser etching of n-GaAs. For single-beam etching and holographic etching with high ratios of average spacing of holographic grating to average spacing of ripple structures (LAMBDA(h)/LAMBDA(h)), ripple structures were observed. In particular, in p-polarization, spatial fluctuation was greater than that in s-polarization. This might occur because phase distortion cannot be eliminated by p-polarization beam irradiation. For holographic etching with small LAMBDA(h)/LAMBDA(r) ratios, ripple structures were changed into grating structures because these grating structures might be generated in phase with holographic gratings.
引用
收藏
页码：4433 / 4436
页数：4
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