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- [26] EFFECT OF CHANGES IN BAND-STRUCTURE PARAMETERS ON FUNDAMENTAL ABSORPTION-SPECTRUM OF SEMICONDUCTORS (FUNDAMENTAL ABSORPTION-EDGE OF GAAS1-XPX)SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 337 - 341PIKHTIN, ANRAZBEGAEV, VNYASKOV, DA
- [27] AN INVESTIGATION OF THE LONG-WAVELENGTH FUNDAMENTAL ABSORPTION EDGE OF CDS AND ZNSE POLYCRYSTALLINE LAYERS AT LOW TEMPERATURESSOVIET PHYSICS-SOLID STATE, 1961, 2 (11): : 2617 - 2620GROSS, EFRAZBIRIN, BSSAFAROV, VI
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