THERMAL-INSTABILITY IN P-CHANNEL TRANSISTORS WITH REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS

被引：2
|
作者：
FISHBEIN, B [1 ]
DOYLE, B [1 ]
CONRAN, C [1 ]
机构：
[1] DIGITAL EQUIPMENT CORP,77 REED RD,HUDSON,MA 01749
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 11期
关键词：
D O I：
10.1109/16.163544
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：2672 / 2672
页数：1
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