THERMAL-INSTABILITY IN P-CHANNEL TRANSISTORS WITH REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS

被引：2

作者：

FISHBEIN, B ^{[1
]}

DOYLE, B ^{[1
]}

CONRAN, C ^{[1
]}

机构：

[1] DIGITAL EQUIPMENT CORP,77 REED RD,HUDSON,MA 01749

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 11期

关键词：

D O I：

10.1109/16.163544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：2672 / 2672

页数：1

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