ELECTRICAL CHARACTERIZATION OF EPITAXIAL SILICON FILMS FORMED BY A LOW KINETIC-ENERGY PARTICLE PROCESS

被引：15
|
作者：
OHMI, T
IWABUCHI, H
SHIBATA, T
ICHIKAWA, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期
关键词：
D O I：
10.1063/1.100981
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：253 / 255
页数：3
相关论文
共 50 条
  • [41] Properties of silicide films formed by the low-energy implantation of metal ions into silicon
    Rysbaev, A.S.
    Normuradov, M.T.
    Nasridinov, S.S.
    Adambaev, K.A.
    Radiotekhnika i Elektronika, 1997, 41 (01): : 125 - 128
  • [42] CHARACTERIZATION OF POLY(CARBOXYPIPERAZINE) BY MASS ANALYZED ION KINETIC-ENERGY SPECTROMETRY
    FOTI, S
    LIGUORI, A
    MARAVIGNA, P
    MONTAUDO, G
    ANALYTICAL CHEMISTRY, 1982, 54 (04) : 674 - 677
  • [43] OPTICAL AND ELECTRICAL CHARACTERIZATION OF BETA-FESI2 EPITAXIAL THIN-FILMS ON SILICON SUBSTRATES
    LEFKI, K
    MURET, P
    CHERIEF, N
    CINTI, RC
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 352 - 357
  • [44] Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma
    Lab. de Microelectrónica, Facultad de Ciencias C-XI, Univ. Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain
    不详
    J Mater Sci Mater Electron, 5 (393-398):
  • [45] Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma
    M. J. Herna´ndez
    M. Cervera
    J. Garrido
    J. Marti´nez
    J. Piqueras
    Journal of Materials Science: Materials in Electronics, 1999, 10 : 393 - 398
  • [46] Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma
    Hernández, MJ
    Cervera, M
    Garrido, J
    Martínez, J
    Piqueras, J
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1999, 10 (5-6) : 393 - 398
  • [47] Low kinetic-energy loss oscillating-triangular-jet nozzles
    Lee, SK
    Lanspeary, PV
    Nathan, GJ
    Kelso, RM
    Mi, J
    EXPERIMENTAL THERMAL AND FLUID SCIENCE, 2003, 27 (05) : 553 - 561
  • [48] GROWTH AND DOPING OF EPITAXIAL SILICON FILMS IN AN OPEN TETRACHLORIDE PROCESS
    PROKOPEV, EP
    JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1976, 49 (09): : 1933 - 1936
  • [49] Electrical properties of polycrystalline silicon films formed from amorphous silicon films by flash lamp annealing
    Nishikawa, Takuya
    Ohdaira, Keisuke
    Matsumura, Hideki
    CURRENT APPLIED PHYSICS, 2011, 11 (03) : 604 - 607
  • [50] Epitaxial dysprosium silicide films on silicon: growth, structure and electrical properties
    Travlos, A
    Salamouras, N
    Boukos, N
    THIN SOLID FILMS, 2001, 397 (1-2) : 138 - 142
12345