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- [6] Very-low-temperature epitaxial silicon growth by low-kinetic-energy particle bombardment Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (11): : 2146 - 2148
- [8] VERY-LOW-TEMPERATURE EPITAXIAL SILICON GROWTH BY LOW-KINETIC-ENERGY PARTICLE BOMBARDMENT JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2146 - L2148
- [10] KINETIC-ENERGY DISTRIBUTIONS OF CLUSTER IONS FORMED BY PARTICLE BOMBARDMENT AND DIRECT LASER VAPORIZATION ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 198 : 87 - PHYS