COMPUTER-SIMULATION OF CRYSTAL-GROWTH AND DISSOLUTION IN METALS AND SEMICONDUCTORS

被引：0

|

作者：

CLANCY, P

机构：

[1] SCHOOL OF CHEMICAL ENGINEERING, CORNELL UNIVERSITY, ITHACA

来源：

INTERNATIONAL JOURNAL OF SUPERCOMPUTER APPLICATIONS AND HIGH PERFORMANCE COMPUTING | 1991年 / 5卷 / 04期

关键词：

D O I：

10.1177/109434209100500403

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

[No abstract available]

引用

收藏

页码：10 / 33

页数：24

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