共 44 条
- [3] RESIDUAL LATTICE DAMAGE IN AS-IMPLANTED AND ANNEALED SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 391 - 395
- [4] Structural and electrical investigation of high temperature annealed As-implanted Si crystals [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04): : 1504 - 1514
- [5] Study of ion-implanted and post-annealed CVD diamond by TEM [J]. DIAMOND FILMS AND TECHNOLOGY, 1996, 6 (05): : 283 - 291
- [7] Raman image study of defects in ion-implanted and post-annealed silicon [J]. ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1547 - 1551
- [8] Optical and magnetic properties of Ni-implanted and post-annealed ZnO thin films [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 104 (02): : 667 - 675
- [9] ELECTRICAL AND STRUCTURAL-PROPERTIES OF ION-IMPLANTED AND POST-ANNEALED SILICIDE FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 752 - 756
- [10] Optical and magnetic properties of Ni-implanted and post-annealed ZnO thin films [J]. Applied Physics A, 2011, 104 : 667 - 675