ELECTRICAL AND STRUCTURAL-PROPERTIES OF ION-IMPLANTED AND POST-ANNEALED SILICIDE FILMS

被引：6
|
作者：
SORIMACHI, Y [1 ]
ISHIWARA, H [1 ]
YAMAMOTO, H [1 ]
FURUKAWA, S [1 ]
机构：
[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 05期
关键词：
D O I：
10.1143/JJAP.21.752
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：752 / 756
页数：5
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