GROWTH OF ZNSE/MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY

被引：33
|
作者：
TERAGUCHI, N
MOURI, H
TOMOMURA, Y
TANIGUCHI, H
RORISON, J
DUGGAN, G
机构：
[1] SHARP CO LTD,CTR MAT RES & ANAL,TENRI,NARA 632,JAPAN
[2] EUROPE LTD,SHARP LABS,OXFORD OX4 4GA,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期
关键词：
D O I：
10.1063/1.114820
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of ZnSe/MgS strained-layer superlattices (SLSs) has been carried out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photoluminescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material. (C) 1995 American Institute of Physics.
引用
收藏
页码：2945 / 2947
页数：3
相关论文
共 50 条
  • [21] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF CDSE/ZNSE STRAINED-LAYER SINGLE QUANTUM-WELLS AND SUPERLATTICES ON GAAS SUBSTRATES
    FUJITA, S
    WU, YH
    KAWAKAMI, Y
    FUJITA, S
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5233 - 5239
  • [22] ANTIFERROMAGNETISM IN ZNSE/MNSE STRAINED-LAYER SUPERLATTICES
    SAMARTH, N
    KLOSOWSKI, P
    LUO, H
    GIEBULTOWICZ, TM
    FURDYNA, JK
    RHYNE, JJ
    LARSON, BE
    OTSUKA, N
    PHYSICAL REVIEW B, 1991, 44 (09): : 4701 - 4704
  • [23] INVESTIGATION OF MOLECULAR-BEAM EPITAXIALLY GROWN INAS/(IN,GA)SB STRAINED-LAYER SUPERLATTICES
    GOLDING, TD
    SHIH, HD
    ZBOROWSKI, JT
    FAN, WC
    HORTON, CC
    CHOW, PC
    VIGLIANTE, A
    COVINGTON, BC
    CHI, A
    ANTHONY, JM
    SCHAAKE, HF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 880 - 884
  • [24] Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy
    Su, Shaojian
    Zhang, Dongliang
    Zhang, Guangze
    Xue, Chunlai
    Cheng, Buwen
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 64 : 543 - 551
  • [25] INGAAS/INP STRAINED-LAYER QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    LOUALICHE, S
    LECORRE, A
    GODEFROY, A
    CLEROT, F
    LECROSNIER, D
    POUDOULEC, A
    SALAUN, S
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 258 - 260
  • [26] ZNSE-ZNTE STRAINED LAYER SUPERLATTICE ON INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    KOBAYASHI, M
    MINO, N
    KONAGAI, M
    TAKAHASHI, K
    SURFACE SCIENCE, 1986, 174 (1-3) : 550 - 555
  • [27] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNS-ZNXCD1-XS STRAINED-LAYER SUPERLATTICES
    KARASAWA, T
    OHKAWA, K
    MITSUYU, T
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3226 - 3230
  • [28] MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF ZNSE/ZNS STRAINED-LAYER SUPERLATTICES
    AIGOUY, L
    BRIOT, N
    BOUCHARA, D
    CLOITRE, T
    DIBLASIO, M
    GIL, B
    CALAS, J
    BRIOT, O
    AULOMBARD, RL
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (01) : 71 - 76
  • [29] MBE growth and characterization of ZnSe-ZnTe strained-layer superlattices
    Shen, Aidong
    Cui, Jie
    Chen, Yunliang
    Xu, Liang
    Wang, Hailong
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1991, 12 (10): : 583 - 587
  • [30] Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors
    Patrashin, Mikhail
    Akahane, Kouichi
    Sekine, Norihiko
    Hosako, Iwao
    JOURNAL OF CRYSTAL GROWTH, 2017, 477 : 86 - 90
12345