GROWTH OF ZNSE/MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY

被引：33
|
作者：
TERAGUCHI, N
MOURI, H
TOMOMURA, Y
TANIGUCHI, H
RORISON, J
DUGGAN, G
机构：
[1] SHARP CO LTD,CTR MAT RES & ANAL,TENRI,NARA 632,JAPAN
[2] EUROPE LTD,SHARP LABS,OXFORD OX4 4GA,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期
关键词：
D O I：
10.1063/1.114820
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of ZnSe/MgS strained-layer superlattices (SLSs) has been carried out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photoluminescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material. (C) 1995 American Institute of Physics.
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收藏
页码：2945 / 2947
页数：3
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