ELASTIC-CONSTANTS OF A SI/GE SUPERLATTICE AND OF BULK SI AND GE

被引:28
|
作者
WEI, SQ [1 ]
ALLAN, DC [1 ]
WILKINS, JW [1 ]
机构
[1] CORNING INC, APPL PROC RES, CORNING, NY 14831 USA
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 19期
关键词
D O I
10.1103/PhysRevB.46.12411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report extensive convergence tests of the total energy of Si computed within the local-density approximation with a plane-wave basis and pseudopotentials. These convergence tests indicate that to calculate the elastic constants to about 3% relative error requires the use of 400 plane waves in the electronic structure calculation and 10 special k points to compute the density and energy. Further, we find that using the Ceperley-Alder exchange-correlation form in calculating the elastic constants obtains better agreement with the experimental results than using the Wigner form. We report the calculated lattice constants and elastic constants-bulk modulus, C-11, C-12, and C44-of a "free-standing" Si/Ge ordered superlattice. For comparison, the results for bulk silicon and germanium are in excellent agreement with existing experiment and other calculations. The calculation for C44 reported here is unique in the sense that the "internal" atom in the diamond unit cell moves while the crystal is sheared, though previously this relaxation has been dealt with differently. The equilibrium position of the sheared crystal cannot be predicted by scaling arguments from the unstrained crystal. An "averaged elastic theory" based on bulk Si and bulk Ge predicts our computed Si/Ge lattice constant and bulk modulus surprisingly well.
引用
收藏
页码:12411 / 12420
页数:10
相关论文
共 50 条
  • [1] VISCOSITY AND ELASTIC-CONSTANTS OF AMORPHOUS SI AND GE
    WITVROUW, A
    SPAEPEN, F
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7154 - 7161
  • [2] COMPRESSION EFFECT ON THE ELASTIC-CONSTANTS OF SI-GE SOLID-SOLUTION
    SOMA, T
    KATABIRA, Y
    MATSUO, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 110 (02): : K167 - K169
  • [3] Viscosity and elastic constants of amorphous Si and Ge
    1600, American Inst of Physics, Woodbury, NY, USA (74):
  • [4] 3RD ORDER ELASTIC-CONSTANTS OF V3SI AND V3GE
    MENON, CS
    PHILIP, J
    SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 897 - 899
  • [5] TEMPERATURE DEPENDENCES OF THE E0-TRANSITIONS IN BULK GE AND A GE-RICH (SI)M/(GE)N SUPERLATTICE
    DAFESH, PA
    WANG, KL
    PHYSICAL REVIEW B, 1992, 45 (04): : 1712 - 1718
  • [6] PRESSURE DERIVATIVES OF ELASTIC STIFFNESS CONSTANTS UNDER PRESSURE OF SI AND GE
    SOMA, T
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 104 (01): : 293 - 298
  • [7] Anisotropic thermal conductivity of a Si Ge superlattice
    Borca-Tasciuc, T
    Song, D
    Liu, JL
    Chen, G
    Wang, KL
    Sun, X
    Dresselhaus, MS
    Radetic, T
    Gronsky, R
    THERMOELECTRIC MATERIALS 1998 - THE NEXT GENERATION MATERIALS FOR SMALL-SCALE REFRIGERATION AND POWER GENERATION APPLICATIONS, 1999, 545 : 473 - 478
  • [8] Ab initio elastic constants for the lonsdaleite phases of C, Si and Ge
    Wang, SQ
    Ye, HQ
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (30) : 5307 - 5314
  • [9] INTERDIFFUSION IN A SYMMETRICALLY STRAINED GE/SI SUPERLATTICE
    CHANG, SJ
    WANG, KL
    BOWMAN, RC
    ADAMS, PM
    APPLIED PHYSICS LETTERS, 1989, 54 (13) : 1253 - 1255
  • [10] ELASTIC RELAXATION EFFECTS IN STRAINED LAYER SI-GE SUPERLATTICE STRUCTURES
    WEATHERLY, GC
    PEROVIC, DD
    HOUGHTON, DC
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 237 - 242