HIGH-QUALITY EPITAXIAL-GROWTH ON INSITU PATTERNED INP SUBSTRATES

被引：2
|
作者：
TEMKIN, H
HARRIOTT, LR
WEINER, J
HAMM, RA
PANISH, MB
机构：
来源：
III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES | 1989年 / 145卷
关键词：
D O I：
10.1557/PROC-145-39
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：39 / 46
页数：8
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