THEORY OF PIEZOTHERMOPOWER ANISOTROPY IN N-TYPE SI IN REGION OF PHONON DRAG

被引：2

作者：

LUTSYAK, VS

NITSOVICH, VM

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1971年 / 48卷 / 01期

关键词：

D O I：

10.1002/pssb.2220480135

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：359 / +

页数：1

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[31] INVESTIGATION OF THE RELATIONSHIP BETWEEN THE PIEZORESISTANCE AND PIEZOTHERMOELECTRIC POWER OF ELASTICALLY DEFORMED N-TYPE SILICON IN THE ELECTRON-PHONON DRAG REGION
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1325 - 1326
[32] ANISOTROPY OF HALL COEFFICIENT FOR N-TYPE GERMANIUM IN REGION OF MIXED SCATTERING
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[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (10): : 2499 - +
[33] SIGN ANISOTROPY THERMOEMF THEORY OF PHONON-PHONON DRAG OF PURE BISMUTH-TYPE SINGLE-CRYSTALS
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[J]. FIZIKA TVERDOGO TELA, 1984, 26 (06): : 1823 - 1829
[34] PHONON-DRAG THERMOMAGNETIC EFFECTS IN N-TYPE GERMANIUM .1. GENERAL SURVEY
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[J]. PHYSICAL REVIEW, 1958, 111 (01): : 36 - 57
[35] ELECTRON-PHONON INTERACTION IN EXTRINSIC PHOTOCONDUCTIVITY OF N-TYPE SI AND GAP
ONTON, A
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (11) : R18 - &
[36] PHONON EMISSION IN N-TYPE SI-OXIDE-PB TUNNEL JUNCTIONS
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 379 - &
[37] INFLUENCE OF ELASTIC DEFORMATION ON THERMOELECTRIC POWER OF N-TYPE GE IN DRAG EFFECT REGION
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 340 - +
[38] PHONON-PHONON INTERACTION MECHANISM IN N-TYPE GERMANIUM
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 414 - 416
[39] ELECTRON-PHONON SCATTERING AND HIGH-FIELD TRANSPORT IN N-TYPE SI
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[J]. PHYSICAL REVIEW B, 1978, 18 (10) : 5657 - 5666
[40] PHONON PROPAGATION CHARACTERISTICS IN N-TYPE INAS
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