THE SPECIFIC BEHAVIORS OF THE LOW-TEMPERATURE ELECTRICAL-RESISTIVITY OF PDHX

被引:3
|
作者
BURGER, JP
机构
[1] Laboratoire Hydrogène et Défauts dans les Métaux, Université Paris-Sud, F-91405 Orsay
关键词
PD HYDRIDE FILMS; ELECTRICAL RESISTIVITY; PERCOLATION CONDUCTIVITY;
D O I
10.1524/zpch.1993.179.Part_1_2.365
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The residual resistivity of Pd H(x) is much larger for x < 1 compared to x > 0 which can be explained by the Coulomb potential of the Hydrogen interstitial sites. For x = 0.4 related to the mixture of the alpha and beta phases, drho/dT is much larger compared to the corresponding pure phases, a result which can be well explained by the percolation problem due to the geometrical correlations between the alpha and beta domains. But for thin films of thickness d less-than-or-equal-to 1000 angstrom, the variation of rho with d-1 is very similar for x = 0 and x = 0.8, a surprising result which can be explained by the corresponding electronic structures.
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页码:365 / 372
页数:8
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