共 50 条
- [33] Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions Journal of Applied Physics, 2004, 96 (09): : 4960 - 4964
- [35] Nitrogen incorporation kinetics during the sublimation growth of 6H and 4H SiC JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A): : 2240 - 2243
- [37] Photoluminescence and DLTS measurements of 15MeV Erbium implanted 6H and 4H SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 639 - 642
- [39] Photoluminescence excitation spectroscopy on the donor-acceptor pair luminescence in 4H and 6H SiC SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 585 - 588
- [40] Optical transmission, photoluminescence, and Raman scattering of porous SiC prepared from p-type 6H SiC JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5875 - 5878