GALVANOMAGNETIC AND THERMOMAGNETIC PROPERTIES OF EPITAXIAL PB0.8SN0.2TE FILMS

被引:0
|
作者
BOCHKAREVA, LV
ZIMIN, SP
SIZYK, AA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:966 / 969
页数:4
相关论文
共 50 条
  • [31] RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN PB0.8SN0.2TE SINGLE-CRYSTALS
    TROYAN, YG
    SIZOV, FF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (08): : 892 - 894
  • [32] EVALUATION OF PB0.8SN0.2TE DETECTOR FABRICATION USING SURFACE ANALYSIS
    LONGSHORE, R
    JASPER, M
    SUMNER, B
    LOVECCHIO, P
    INFRARED PHYSICS, 1975, 15 (04): : 311 - 315
  • [33] EFFECT OF HYDROGEN ON THE ELECTRICAL-PROPERTIES OF P-TYPE PB0.8SN0.2TE THIN-FILMS
    DAWAR, AL
    JAGADISH, C
    SHISHODIA, PK
    SHARMA, S
    KAPOOR, SK
    SACHAR, BK
    MATHUR, PC
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (01) : 113 - 114
  • [34] CONCENTRATION-DEPENDENCE OF THE SUSCEPTIBILITY EFFECTIVE MASS IN PB0.8SN0.2TE
    ZIEP, O
    GENZOW, D
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (01): : K25 - K27
  • [36] CRYSTALLIZATION FROM VAPOR OF PB0.8SN0.2TE BY THE FORCED FLUX METHOD
    OMALY, J
    RHAJERISON, J
    CADORET, R
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1988, 13 (06): : 489 - 497
  • [37] 电子能谱研究Pb0.8Sn0.2Te表面状态
    罗兴华
    袁诗鑫
    贡树行
    分析测试学报, 1982, (00) : 23 - 29
  • [38] VARIATION OF CARRIER CONCENTRATION IN PB0.8SN0.2TE WITH ANNEALING AND GROWTH TEMPERATURE
    PICKERING, C
    HARDING, WR
    GEEVES, NG
    YOUNG, ML
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (06) : L73 - L77
  • [39] CHARACTERIZATION OF PB0.8SN0.2TE FILMS GROWN ON KCL SUBSTRATES BY HOT-WALL EPITAXY
    ABRAMOF, E
    FERREIRA, SO
    BOSCHETTI, C
    BANDEIRA, IN
    JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 637 - 644
  • [40] Trends in the kinetic and magnetic properties of Pb0.8Sn0.2Te single crystals of high structural perfection
    Radchenko, MV
    Lashkarev, GV
    Slyn'ko, EI
    Malysheva, AP
    PHYSICS OF THE SOLID STATE, 1999, 41 (10) : 1604 - 1607