LINEAR AND NONLINEAR INTERSUBBAND ELECTROABSORPTIONS IN A MODULATION-DOPED QUANTUM-WELL

被引:52
|
作者
ROAN, EJ
CHUANG, SL
机构
[1] University of Illinois, Department of Electrical and Computer Engineering, Urbana, IL 61801
关键词
D O I
10.1063/1.348545
中图分类号
O59 [应用物理学];
学科分类号
摘要
The linear and nonlinear optical-absorption coefficients and changes in refractive indices due to intersubband optical transitions in a modulation-doped quantum well with an applied electric field are derived theoretically based on the density-matrix formalism. The calculations of electron energy levels and envelope wave functions in a double-confinement quantum-well structure are discussed with electric-field and screening effects. The electric-field, screening, and tunneling effects on the electronic properties (electron energy levels and envelope wave functions) and optical properties (linear and nonlinear optical-absorption coefficients and changes in refractive indices) are discussed with detailed numerical results. The comparisons between theoretical results and the corresponding experimental data show good agreement. The results presented here will be useful for high-speed intersubband infrared photodetectors and electro-optical modulators.
引用
收藏
页码:3249 / 3260
页数:12
相关论文
共 50 条
  • [41] EFFECT OF A FINITE-WIDTH BARRIER ON BINDING-ENERGY IN MODULATION-DOPED QUANTUM-WELL STRUCTURES
    CHEN, H
    ZHOU, SX
    PHYSICAL REVIEW B, 1987, 36 (18): : 9581 - 9586
  • [42] STRAINED QUANTUM-WELL MODULATION-DOPED INGASB/ALGASB STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    KLEM, JF
    LOTT, JA
    SCHIRBER, JE
    KURTZ, SR
    LIN, SY
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (03) : 315 - 321
  • [43] Spectroscopic investigations of photoinduced changes of the spatial distribution of charge carriers in modulation-doped quantum-well structures
    Hartmann, R
    Kraus, J
    Schaack, G
    Panzlaff, K
    PHYSICAL REVIEW B, 1996, 53 (19): : 13011 - 13015
  • [44] CALCULATION OF LINEAR AND NONLINEAR INTERSUBBAND OPTICAL ABSORPTIONS IN A QUANTUM-WELL MODEL WITH AN APPLIED ELECTRIC-FIELD
    AHN, D
    CHUANG, SL
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (12) : 2196 - 2204
  • [45] Spectroscopic investigations of photoinduced changes of the spatial distribution of charge carriers in modulation-doped quantum-well structures
    Hartmann, R.
    Kraus, J.
    Schaack, G.
    Panzlaff, K.
    Physical Review B: Condensed Matter, 53 (19):
  • [46] TRANSIENT INTERSUBBAND ABSORPTION-SPECTRA OF HOT-ELECTRONS IN A MODULATION-DOPED MULTIPLE-QUANTUM-WELL STRUCTURE
    ELSAESSER, T
    BAUERLE, RJ
    KAISER, W
    LOBENTANZER, H
    STOLZ, W
    PLOOG, K
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1707 - 1711
  • [47] Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
    Gmachl, C
    Ng, HM
    Chu, SNG
    Cho, AY
    APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3722 - 3724
  • [48] ANISOTROPIC TRANSPORT IN MODULATION DOPED QUANTUM-WELL STRUCTURES
    RADULESCU, DC
    WICKS, GW
    SCHAFF, WJ
    CALAWA, AR
    EASTMAN, LF
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 106 - 108
  • [49] Electronic transport in modulation-doped InSb quantum well heterostructures
    Orr, J. M. S.
    Gilbertson, A. M.
    Fearn, M.
    Croad, O. W.
    Storey, C. J.
    Buckle, L.
    Emeny, M. T.
    Buckle, P. D.
    Ashley, T.
    PHYSICAL REVIEW B, 2008, 77 (16)
  • [50] Gain of intersubband Raman lasing in modulation-doped asymmetric coupled double quantum wells
    Maung, SM
    Katayama, S
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 774 - 778