EFFECT OF PLASMA-GENERATED HYDROGEN RADICALS ON THE GROWTH OF GAAS USING TRIMETHYLGALLIUM

被引：6
|
作者：
SATO, M
机构：
[1] NTT Basic Research Laboratories, Atsugi, Kanagawa, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 1B期
关键词：
MOCVD; MOVPE; GAAS; HYDROGEN RADICAL; TMG DECOMPOSITION; GROWTH KINETICS; CARBON INCORPORATION;
D O I：
10.1143/JJAP.34.L93
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of hydrogen radicals on the metalorganic chemical vapor deposition of GaAs was investigated by introducing radicals using a downstream-type plasma-cracking cell. The hydrogen radicals enhanced the decomposition of trimethylgallium at the substrate surface. The increase in the growth rates with increasing radical flux at low temperatures, where growth was kinetically-controlled, and the reduction in carbon concentrations in GaAs grown at high temperatures with the addition of radicals were observed.
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页码：L93 / L96
页数：4
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