PHOTOLUMINESCENCE STUDY OF CARRIER TRANSFER INTO INGAAS/GAAS QUANTUM-WELLS UNDER DIFFERENT EXCITATION INTENSITIES

被引：3
|
作者：
MARCINKEVICIUS, S
FROJDH, K
NAUDZIUS, K
机构：
[1] VILNIUS SEMICOND PHYS INST,VILNIUS,LITHUANIA,USSR
[2] ROYAL INST TECHNOL,DEPT PHYS 2,S-10044 STOCKHOLM 70,SWEDEN
来源：
JOURNAL OF LUMINESCENCE | 1992年 / 54卷 / 02期
关键词：
D O I：
10.1016/0022-2313(92)90251-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Photoexcited electron transfer into quantum wells is studied in InGaAs/GaAs single quantum well structures by means of CW photoluminescence at 80 K. The drift component of the electron transport induced by the surface electric field is found to decrease with increasing excitation intensity. Quantum well photoluminescence is shown to be applicable for studies of the surface band bending in semiconductors.
引用
收藏
页码：89 / 93
页数：5
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