THE BEHAVIOR OF ARSENIC IN CRYSTALS OF SILICON DURING SELF-ANNEALING ION-IMPLANTATION

被引：1
|
作者：
KOMAROV, FF
NOVIKOV, AP
KOTOV, EV
PODLIPKO, EA
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 112卷 / 01期
关键词：
D O I：
10.1002/pssa.2211120138
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：323 / 326
页数：4
相关论文
共 50 条
  • [1] Ballistic self-annealing during ion implantation
    Prins, JF
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (20) : 3003 - 3010
  • [2] Contamination of silicon during ion-implantation and annealing
    Liu, X
    Pohl, RO
    Asher, S
    Crandall, RS
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 407 - 410
  • [3] Contamination of silicon during ion-implantation and annealing
    Liu, Xiao
    Pohl, R.O.
    Asher, Sally
    Crandall, R.S.
    [J]. Journal of Non-Crystalline Solids, 227-230 (Pt A): : 407 - 410
  • [4] CHARACTERIZATION OF DEFECTS PRODUCED DURING SELF-ANNEALING IMPLANTATION OF AS IN SILICON
    LULLI, G
    MERLI, PG
    MIGLIORI, A
    MATTEUCCI, G
    STANGHELLINI, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) : 2708 - 2712
  • [5] ANOMALOUS DISTRIBUTION OF AS DURING IMPLANTATION IN SILICON UNDER SELF-ANNEALING CONDITIONS
    LULLI, G
    MERLI, PG
    RIZZOLI, R
    BERTI, M
    DRIGO, AV
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 2940 - 2946
  • [6] RADIATION-DAMAGE EVOLUTION AND ITS RELATION WITH DOPANT DISTRIBUTION DURING SELF-ANNEALING IMPLANTATION OF ARSENIC IN SILICON
    LULLI, G
    MERLI, PG
    MIGLIORI, A
    BRUSATIN, G
    DRIGO, AV
    GERARDI, C
    GUERRIERI, A
    [J]. JOURNAL OF MATERIALS RESEARCH, 1992, 7 (06) : 1413 - 1422
  • [7] RESIDUAL DEFECTS IN SILICON AFTER AS+ION IMPLANTATION AT SELF-ANNEALING REGIMES
    KOMAROV, FF
    KOTOV, EV
    NOVIKOV, AP
    PETROV, SA
    CHITKO, VI
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1987, 105 (1-2): : 79 - 84
  • [8] SELF-ANNEALING IN ION-IMPLANED SILICON
    KOMAROV, FF
    NOVIKOV, AP
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01): : 273 - 287
  • [9] A STUDY OF MOLECULAR ARSENIC ION-IMPLANTATION IN SILICON
    LIN, CL
    FANG, ZW
    ZHOU, W
    NI, RS
    ZOU, SC
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 384 - 386
  • [10] DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON
    YOKOTA, K
    OKAMOTO, Y
    MIYASHITA, F
    HIRAO, T
    WATANABE, M
    SEKINE, K
    ANDO, Y
    MATSUDA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7247 - 7251
12345