APPROXIMATION OF THE EINSTEIN RELATION FOR HEAVILY DOPED SILICON

被引：2

|

作者：

RISTIC, SD

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 52卷 / 02期

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D O I：

10.1002/pssa.2210520250

中图分类号：

T [工业技术];

学科分类号：

08 ;

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页码：K129 / K132

页数：4

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