FIELD-DEPENDENT ELECTRON-MOBILITY IN SILICON BETWEEN 8 AND 77 K - A SEMI-EMPIRICAL MODEL

The development of a semiempirical model that predicts the electron mobility in silicon as a function of the electric field in the direction, the doping density, and the temperature for the temperature range 8 to 77 K is discussed. The approach integrates empirical formulas relating drift velocity and mobility to electric field, experimental data for hyperpure silicon at low temperatures, a theory of scattering rate scaling, and the simulation of electron transport, using the Monte Carlo method. Figures showing the resulting electron drift velocity under various conditions of doping and temperature are included.