SODIUM-INDUCED 2 X 1-] 1 X-1 SURFACE STRUCTURAL TRANSITION ON SI(111)

被引：17
|
作者：
REIHL, B
SORENSEN, SL
DUDDE, R
MAGNUSSON, KO
机构：
[1] IBM Research Division, Zurich Research Laboratory
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.46.1838
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sodium deposited on the cleaved Si(111)2 X 1 surface induces a 2 X 1 --> 1 X 1 surface structural transition at about 1/2 monolayer coverage. Angle-resolved direct and inverse photoemission reveal the surface to be semiconducting. The measured energy dispersion of the empty Na-induced surface state is only consistent with calculations that favor the threefold-hollow site for the Na adsorption position. Its bonding character (ionic versus covalent) will be discussed.
引用
收藏
页码：1838 / 1841
页数：4
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