SPECTRAL DEPENDENCE OF QUANTUM EFFICIENCY OF PHOTOCONDUCTIVITY OF CDX HG1-X TE ALLOYS

被引:0
|
作者
SHCHETININ, MP
BARYSHEV, NS
AVERYANO.IS
VOLKOVA, FP
CHERKASO.AP
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 5卷 / 06期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1095 / +
页数:1
相关论文
共 50 条
  • [21] Quantitative Auger Electron Spectroscopic Analysis of Hg1-x Cd x Te
    Gaucher, A.
    Martinez, E.
    Baylet, J.
    Cardinaud, C.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (04) : 1255 - 1262
  • [22] Interaction Between AsHg and V Hg in Arsenic-Doped Hg1-x Cd x Te
    Wang, Ziyan
    Huang, Yan
    Chen, Xiaoshuang
    Zhao, Huxian
    Lei, Wen
    Lu, Wei
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3054 - 3058
  • [23] Study of lifetimes and photoconductivity relaxation in heterostructures with Hg x Cd1-x Te/Cd y Hg1-y Te quantum wells
    Morozov, S. V.
    Joludev, M. S.
    Antonov, A. V.
    Rumyantsev, V. V.
    Gavrilenko, V. I.
    Aleshkin, V. Ya.
    Dubinov, A. A.
    Mikhailov, N. N.
    Dvoretskiy, S. A.
    Drachenko, O.
    Winnerl, S.
    Schneider, H.
    Helm, M.
    SEMICONDUCTORS, 2012, 46 (11) : 1362 - 1366
  • [24] Impurity and phase compositions of the surface of Cd x Hg1-x Te solid solutions
    Fedyaeva, O. A.
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A, 2011, 85 (07) : 1211 - 1215
  • [25] Temperature dependence of the carrier lifetime in narrow-gap Cd x Hg1-x Te solid solutions: Radiative recombination
    Bazhenov, N. L.
    Mynbaev, K. D.
    Zegrya, G. G.
    SEMICONDUCTORS, 2015, 49 (09) : 1170 - 1175
  • [26] The influence of hydrogenation on the electrical properties of the Cd x Hg1-x Te epitaxial structures
    Varavin, V. S.
    Sidorov, G. Yu.
    Garifullin, M. O.
    Vishnyakov, A. V.
    Sidorov, Yu. G.
    SEMICONDUCTORS, 2011, 45 (03) : 397 - 402
  • [27] Structural Properties of Cd x Hg1-x Te Solid-Solution Nanoparticles
    Sredin, V. G.
    Nikiforov, V. N.
    Zagarskikh, V. I.
    TECHNICAL PHYSICS LETTERS, 2017, 43 (12) : 1057 - 1059
  • [28] Analysis of the photoluminescence spectra of Cd x Hg1-x te heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy
    Voitsekhovskii, A. V.
    Gorn, D. I.
    Izhnin, I. I.
    Izhnin, A. I.
    Goldin, V. D.
    Mikhailov, N. N.
    Dvoretskii, S. A.
    Sidorov, Yu G.
    Yakushev, M. V.
    Varavin, V. S.
    RUSSIAN PHYSICS JOURNAL, 2013, 55 (08) : 910 - 916
  • [29] Temperature dependence of the carrier lifetime in Cd x Hg1-x Te narrow-gap solid solutions with consideration for Auger processes
    Bazhenov, N. L.
    Mynbaev, K. D.
    Zegrya, G. G.
    SEMICONDUCTORS, 2015, 49 (04) : 432 - 436
  • [30] Chapter 2 Crystal Growth and Properties of Hg1-x Cd x Se Alloys
    Whitsett, C.R.
    Broerman, J.G.
    Summers, C.J.
    Semiconductors and Semimetals, 1981, 16 (0C) : 53 - 118