FIELD-EFFECT TRANSISTORS USING BORON-DOPED DIAMOND EPITAXIAL-FILMS

被引：100
|
作者：
SHIOMI, H
NISHIBAYASHI, Y
FUJIMORI, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期
关键词：
D O I：
10.1143/JJAP.28.L2153
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L2153 / L2154
页数：2
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