BARRIER LAYER AT METAL-CERAMIC INTERFACE IN FERROELECTRIC MIM STRUCTURES

被引:0
|
作者
GAUCHER, P
HECTOR, J
GANNE, JP
机构
来源
JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 08期
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T [工业技术];
学科分类号
08 ;
摘要
The influence of interfacial contact effects in a ferroelectric Metal-Insulator-Metal (MIM) structure is described. Lead Titano-Zirconate (PZT) material is deposited by a sol-gel technique on a platinum bottom electrode. Top electrodes are deposited after PZT annealing. The ferroelectric properties of the PZT (related to the hysteresis curve) are strongly dependent on the thermal treatments of both electrodes. Preannealing of the bottom electrode before PZT deposition, as well as post annealing of the top electrodes, lead to an improvement of the properties (increase in remanent polarization and in dielectric constant). This is explained by the suppression of the contact barrier at the interfaces between PZT and metal. The switching of the domains in the subsaturated regime of the hysteresis can be modelled by introducing a non ferroelectric barrier at the interfaces when the electrodes are not annealed.
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页码:1617 / 1623
页数:7
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