HOPPING CONDUCTION IN A FREESTANDING GAAS-ALGAAS HETEROSTRUCTURE WIRE

被引：2
|
作者：
HASKO, DG [1 ]
CLEAVER, JRA [1 ]
AHMED, H [1 ]
SMITH, CG [1 ]
DIXON, JE [1 ]
机构：
[1] EPI MAT LTD,CAMBRIDGE CB6 3NW,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期
关键词：
D O I：
10.1063/1.109287
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the fabrication and electron transport in a novel heterostructure in which layers of AlGaAs and GaAs have been grown after a submicron free-standing GaAs wire has been formed. Electronic conduction at low temperatures in this material is shown to be consistent with three-dimensional hopping conduction with a transition to one-dimensional hopping at temperatures below 1 K.
引用
收藏
页码：2533 / 2535
页数：3
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