STUDY OF SURFACE-STATES IN (110) N-GAAS BY EXOELECTRON EMISSION MEASUREMENTS

被引：12
|
作者：
RAILKAR, TA
BHIDE, RS
BHORASKAR, SV
MANORAMA, V
RAO, VJ
机构：
[1] Department of Physics, University of Poona
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 01期
关键词：
D O I：
10.1063/1.352150
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Native surface defects on gallium arsenide are detected by thermally stimulated exoelectron emission measurements. Two emission peaks were identified that were correlated to the As(Ga) antisite defect. Plasma polymerized polythiophene grown on cleaned gallium arsenide is shown to improve the photoluminescence intensity of gallium arsenide and consequently the exoelectron emission measurements indicated the disappearance of one of the peaks. The results thus confirm the passivation of one of the As(Ga) antisite defects. The effects are also discussed in view of the low angle x-ray diffraction spectrum for cleaned and polythiophene treated gallium arsenide. Growth of species involving gallium sulfur and arsenic sulfur were also detected.
引用
收藏
页码：155 / 157
页数：3
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