CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR

被引：2

作者：

YARN, KF ^{[1
]}

WANG, YH ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs current-controlled bipolar-unipolar transition negative differential resistance (NDR) transistors using an n+-i-p+-i-n + homojunction structure prepared by molecular beam epitaxy are demonstrated. For a base thickness of 200 Å and using a highly doped sheet concentration of 1013 cm-2, a NDR region is revealed for IB<100 μA. The peak-to-valley current ratios are about 8 at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. When IB>=100 μA, the proposed device operates as a conventional bipolar transistor. Additionally, the effects of base thickness on current-voltage characteristics are also investigated.

引用

页码：777 / 779

页数：3

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