STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE

被引：48
|
作者：
NELMES, RJ
MCMAHON, MI
WRIGHT, NG
ALLAN, DR
LIU, H
LOVEDAY, JS
机构：
[1] Department of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3JZ, Mayfield Road
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期
关键词：
SEMICONDUCTORS; HIGH PRESSURE; X-RAY DIFFRACTION; PHASE TRANSITIONS;
D O I：
10.1016/0022-3697(94)00236-3
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Extensive new structural results on II-VI, III-V and group IV semiconductors under pressure have been obtained over the past two years at SRS Daresbury, using angle-dispersive techniques and an image-plate detector. In this paper, a brief overview is presented of recent work on Si, Ge, GaSb, InSb, InAs, InP and GaAs.
引用
收藏
页码：539 / 543
页数：5
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