THE THERMAL-EQUILIBRIUM STATE OF SEMICONDUCTOR-DEVICES

被引:7
|
作者
UNTERREITER, A
机构
[1] Fachbereich Mathematik, Technische Universität Berlin Straße des 17. Juni 136
关键词
THERMAL EQUILIBRIUM STATE OF MIXTURE OF CHARGED GASES; VARIATIONAL INEQUALITIES; MINIMIZATION OF TOTAL ENERGY; HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL;
D O I
10.1016/0893-9659(94)90091-4
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
The thermal equilibrium state of two oppositely charged gases confined to a bounded domain Omega subset of R(m), m = 1,2 or m = 3, is entirely described by the gases' particle densities p, n minimizing the total energy epsilon(p, n). It is shown that for given P,N > 0 the energy functional epsilon admits a unique minimizer in {(p, n) epsilon L(2)(Omega) x L(2)(Omega) : p,n greater than or equal to 0, integral(Omega)P = P,integral(Omega)n = N} and that p, n epsilon C(Omega)boolean AND L(infinity)(Omega). The analysis is applied to the hydrodynamic semiconductor device equations. These equations in general possess more than one thermal equilibrium solution, but only the unique solution of the corresponding variational problem minimizes the total energy. It is equivalent to prescribe boundary data for electrostatic potential and particle densities satisfying the usual compatibility relations and to prescribe V-e and P, N for the variational problem.
引用
收藏
页码:39 / 43
页数:5
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