GAAS/ALGAAS PIN MQW STRUCTURES GROWN ON PATTERNED SI-SUBSTRATES

被引：4

作者：

WOODBRIDGE, K ^{[1
]}

BARNES, P ^{[1
]}

MURRAY, R ^{[1
]}

ROBERTS, C ^{[1
]}

PARRY, G ^{[1
]}

机构：

[1] UNIV LONDON,IMPERIAL COLL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90588-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report structural and optical studies of a pin MQW structure grown on a patterned Si substrate. We find that a high density of microcracks in the [110] directions are formed on the plain area of the substrate but that these are almost totally absent on the patterned areas. Photoluminescence measurements show a shift of QW emission to higher energies as island size is reduced with little change in intensity. These results show that good quality MQW device structures with reduced strain and freedom from microcracks can be grown on patterned Si.

引用

页码：112 / 115

页数：4

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