SECONDARY DEFECTS OF AS+ IMPLANTED SILICON MEASURED BY THERMAL WAVE TECHNIQUE

被引：5
|
作者：
ISHIKAWA, K
YOSHIDA, M
INOUE, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1987年 / 26卷 / 07期
关键词：
D O I：
10.1143/JJAP.26.L1089
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1089 / L1091
页数：3
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