OPTICAL AND ELECTRICAL-PROPERTIES OF GA2TE3 CRYSTALS

被引：16

作者：

JULIEN, C ^{[1
]}

IVANOV, I ^{[1
]}

ECREPONT, C ^{[1
]}

GUITARD, M ^{[1
]}

机构：

[1] FAC PHARM CHATENAY MALABRY,CHIM PHYS MINERAL & BIOINORGAN LAB,F-92000 CHATENAY MALABRY,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 145卷 / 01期

关键词：

D O I：

10.1002/pssa.2211450119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical and electrical properties of the gallium telluride Ga2Te3 are reported. Lattice modes are investigated using far-infrared spectroscopy and polarized Raman scattering experiments. The far-infrared reflectivity spectrum which is analyzed using a Lorentzian-oscillator model and the Raman spectrum shows that this compound has a defect structure with disordered vacancies. Modes with A-symmetry are observed at 86 and 112 cm(-1). The semiconducting character is evidenced by electrical studies and the sensitive behavior to normal atmosphere is observed in the electrical conductivity of a sample maintained in air.

引用

页码：207 / 215

页数：9

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