OPTICAL AND ELECTRICAL-PROPERTIES OF GA2TE3 CRYSTALS

被引：16
|
作者：
JULIEN, C [1 ]
IVANOV, I [1 ]
ECREPONT, C [1 ]
GUITARD, M [1 ]
机构：
[1] FAC PHARM CHATENAY MALABRY,CHIM PHYS MINERAL & BIOINORGAN LAB,F-92000 CHATENAY MALABRY,FRANCE
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 145卷 / 01期
关键词：
D O I：
10.1002/pssa.2211450119
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Optical and electrical properties of the gallium telluride Ga2Te3 are reported. Lattice modes are investigated using far-infrared spectroscopy and polarized Raman scattering experiments. The far-infrared reflectivity spectrum which is analyzed using a Lorentzian-oscillator model and the Raman spectrum shows that this compound has a defect structure with disordered vacancies. Modes with A-symmetry are observed at 86 and 112 cm(-1). The semiconducting character is evidenced by electrical studies and the sensitive behavior to normal atmosphere is observed in the electrical conductivity of a sample maintained in air.
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页码：207 / 215
页数：9
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