PHOTOINDUCED METAL-INSULATOR-TRANSITION IN ALGAAS

被引：0
|
作者：
KATSUMOTO, S
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 108期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We observed the metal-insulator transition in AlGaAs:Si tuning the electron concentration finely by means of persistent photoconductivity. Insulator to metal transition and re-entrance to insulator by the external magnetic field were also observed. Besides the conductivity, the Hall conductivity, the dielectric susceptibility, variable range hopping conduction were measured. The results are compared with the effective Landau theory for disordered Fermi liquid and with Austin-Mott-Efros-Shklovskii model for disordered insulators.
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页码：17 / 28
页数：12
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