IMPURITY CONDUCTION IN P-TYPE ZNSNAS2

被引：3
|
作者：
ISOMURA, S
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期
关键词：
D O I：
10.1002/pssa.2210660266
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K157 / K164
页数：8
相关论文
共 50 条
  • [1] INVERSION OF TYPE OF CONDUCTION OF ZNSNAS2
    KRIVOV, MA
    MELEV, VG
    KLIMOV, VN
    KHLYSTOVA, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 807 - 808
  • [2] ELECTRICAL PROPERTIES OF P-TYPE ZNSNAS2 CRYSTALS AT LOW TEMPERATURES
    KESAMANL.FP
    NASLEDOV, DN
    RUD, YV
    PHYSICA STATUS SOLIDI, 1965, 8 (03): : K159 - &
  • [3] ELECTROREFLECTION SPECTRA OF ZNSNAS2
    KRIVAITE, GZ
    KORNEEV, EF
    SHILEIKA, AY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1961 - &
  • [4] Magnetotransport properties of MnAs/ZnSnAs2/ZnSnAs2: Mn ferromagnet/semiconductor hybrid structures
    Oomae, Hiroto
    Jinbo, Yoshio
    Toyota, Hideyuki
    Uchitomi, Naotaka
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (07): : 1336 - 1339
  • [5] ELECTROREFLECTANCE AND THERMOREFLECTANCE OF ZNSNAS2
    KWAN, CCY
    WOOLLEY, JC
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 44 (02): : K93 - &
  • [6] KRISTALLSTRUKTUR VON ZNSNAS2
    PFISTER, H
    ACTA CRYSTALLOGRAPHICA, 1963, 16 (02): : 153 - &
  • [7] PIEZORESISTANCE OF P-TYPE GERMANIUM IN IMPURITY CONDUCTION REGION
    SUGIYAMA, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (07) : 1109 - &
  • [8] IMPURITY CONDUCTION IN P-TYPE SILICON AT MICROWAVE FREQUENCIES
    TANAKA, S
    FAN, HY
    PHYSICAL REVIEW, 1963, 132 (04): : 1516 - &
  • [9] Growth and structure of ZnSnAs2 crystals
    Marenkin, S. F.
    Trukhan, V. M.
    Palkina, K. K.
    Haliakevich, T. V.
    Mikhailov, S. G.
    Molchanov, A. V.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2006, 51 (05) : 790 - 793
  • [10] Impurity band conduction and negative magnetoresistance in p-ZnSnAs2 thin films
    Asubar, Joel T.
    Jinbo, Yoshio
    Uchitomi, Naotaka
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5, 2009, 6 (05): : 1158 - 1161
12345