SILICIDE FORMATION BY DIRECT METAL IMPLANTATION

被引：0
|
作者：
KOZICKI, MN [1 ]
机构：
[1] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C450 / C450
页数：1
相关论文
共 50 条
  • [1] SILICIDE FORMATION ON POLYCRYSTALLINE SILICON BY DIRECT METAL IMPLANTATION
    KOZICKI, MN
    ROBERTSON, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 878 - 881
  • [2] REFRACTORY-METAL SILICIDE FORMATION BY ION-IMPLANTATION
    WANG, KL
    CHIANG, SW
    BACON, F
    REIHL, RF
    THIN SOLID FILMS, 1980, 74 (02) : 239 - 244
  • [3] REFRACTORY-METAL SILICIDE FORMATION INDUCED BY AS+ IMPLANTATION
    TSAI, MY
    PETERSSON, CS
    DHEURLE, FM
    MANISCALCO, V
    APPLIED PHYSICS LETTERS, 1980, 37 (03) : 295 - 298
  • [4] STUDY OF CO SILICIDE FORMATION BY MULTIPLE IMPLANTATION
    WITZMANN, A
    SCHIPPEL, S
    ZENTGRAF, A
    GAJDUK, PI
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7250 - 7260
  • [5] ALTERATION OF NI SILICIDE FORMATION BY N IMPLANTATION
    WIELUNSKI, L
    SCOTT, DM
    NICOLET, MA
    VONSEEFELD, H
    APPLIED PHYSICS LETTERS, 1981, 38 (02) : 106 - 108
  • [6] MODIFICATION OF NICKEL SILICIDE FORMATION BY OXYGEN IMPLANTATION
    SCOTT, DM
    NICOLET, MA
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 655 - 660
  • [7] METAL SILICON REACTIONS AND SILICIDE FORMATION
    SHIBATA, T
    WAKITA, A
    SIGMON, TW
    GIBBONS, JF
    SEMICONDUCTORS AND SEMIMETALS, 1984, 17 : 341 - 395
  • [8] Ion formation of metal silicide films
    Danilina T.I.
    Chistoedova I.A.
    Polyntsev E.S.
    Applied Physics, 2022, (06): : 68 - 75
  • [9] Silicide synthesis by metal ion implantation and ion deposition
    Zhang, TH
    Wu, YG
    Yi, ZZ
    Zhang, SJ
    Wu, XY
    Zhang, X
    Zhang, HX
    Zhang, XJ
    Qian, WD
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 491 - 496
  • [10] FORMATION OF SHALLOW P+ JUNCTIONS BY IMPLANTATION INTO SILICIDE
    BARLOW, KJ
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 507 - 510
12345