A STUDY OF THE DENSITY OF LOCALIZED STATES IN A-GE22SE78-XBIX

被引：6
|
作者：
DWIVEDI, PK
KUMAR, S
SRIVASTAVA, SK
KUMAR, A
机构：
[1] Department of Physics, Harcourt Butler Technological Institute, Kanpur
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1994年 / 13卷 / 15期
关键词：
D O I：
10.1007/BF00633537
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1136 / 1138
页数：3
相关论文
共 50 条
  • [31] Experimental verification of localized defect states in Ga-Ge-Se nano colloidal solutions
    Sebastian, Indu
    Nampoori, V. P. N.
    Radhakrishnan, P.
    Thomas, Sheenu
    JOURNAL OF MATERIALS SCIENCE, 2014, 49 (10) : 3732 - 3735
  • [32] Study of Density of Localized States in a-Se100-xSbx Films by Space Charge Limited Conduction Measurements
    Kushwaha, V. S.
    Kumar, S.
    Kumar, A.
    TURKISH JOURNAL OF PHYSICS, 2005, 29 (06): : 349 - 354
  • [33] PHOTOCURRENT TRANSIENT SPECTROSCOPY OF THE DENSITY OF LOCALIZED STATES IN DOPED A-AS2SE3
    VANINOV, V
    ORENSTEIN, J
    KASTNER, M
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 252 - 252
  • [34] LCAO STUDY OF THE DENSITY-OF-STATES OF GE/RBF
    STANKIEWICZ, B
    VACUUM, 1995, 46 (5-6) : 541 - 544
  • [35] Conduction mechanism and defect density of states in amorphous Te15 (Se100-xBix)85 glassy alloys
    Kumar, Kameshwar
    Thakur, Nagesh
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2020, 58 (03) : 189 - 192
  • [36] Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy
    Yoshimoto, Masahiro
    Itoh, Mizuki
    Tominaga, Yoriko
    Oe, Kunishige
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 73 - 76
  • [37] Impact of intermediate localized states on nonlinear optical absorption of Ga-Ge-Se nanocolloidal solutions
    Sebastian, Indu
    Divya, S.
    Nampoori, V. P. N.
    Radhakrishnan, P.
    Thomas, Sheenu
    APPLIED PHYSICS LETTERS, 2013, 102 (03)
  • [38] Estimation of density of localized states of a-Se100-xSbx films using electrical properties
    Khan, MAM
    Zulfequar, M
    Husain, M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2001, 62 (06) : 1093 - 1101
  • [39] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3
    ORENSTEIN, J
    KASTNER, M
    PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1421 - 1424
  • [40] Experimental study of the density of states in the band gap of a-Se
    Benkhedir, ML
    Aida, MS
    Qamhieh, N
    Stesmans, A
    Adriaenssens, GJ
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (01): : 329 - 332
12345