II-VI COMPOUND THIN-FILM DEPOSITION BY RESONANT LASER SPUTTERING

被引:5
|
作者
LIU, Z
GELINAS, MP
COOMBE, RD
机构
[1] Department of Chemistry, University of Denver, Denver
关键词
D O I
10.1063/1.356161
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-resolved laser-induced fluorescence measurements indicate that Zn atoms excited to the 4 3P(J) metastable state react rapidly with group-VI Molecules O2, CS2, and H2S. Rate constants for these processes are presented. Based on these data, a method for deposition of thin films of the ZnO or ZnS products of these reactions is demonstrated, wherein the Zn atoms are both sputtered from a target and excited to the 4 3p(J) state by near-resonant radiation from a pulsed XeCl laser.
引用
收藏
页码:3098 / 3104
页数:7
相关论文
共 50 条
  • [1] II-VI COMPOUND SEMICONDUCTOR THIN-FILM ELECTRODEPOSITION BY ECALE
    STICKNEY, JL
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 210 : 297 - INOR
  • [2] THIN-FILM II-VI PHOTOVOLTAICS
    CHU, TL
    CHU, SS
    SOLID-STATE ELECTRONICS, 1995, 38 (03) : 533 - 549
  • [3] II-VI THIN-FILM POLYCRYSTALLINE MULTILAYER CONVERTERS FOR SOLAR PHOTOVOLTAICS
    BOBRENKO, YN
    KISLYUK, VV
    KOLEZHUK, KV
    KOMASHCHENKO, VN
    PAVELETS, SY
    SHENGELIYA, TE
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 33 (01) : 83 - 90
  • [4] Compound-target sputtering for niobium carbide thin-film deposition
    Liao, MY
    Gotoh, Y
    Tsuji, H
    Ishikawa, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : L24 - L27
  • [5] ENERGY-TRANSFER IN II-VI SEMICONDUCTING THIN-FILM ELECTROLUMINESCENT DEVICES
    SOHN, SH
    LEE, SY
    SOHN, KS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1994, 27 (04) : 417 - 421
  • [6] Pulsed laser deposition of II-VI semiconductor thin films and their layered structures
    Oszwaldowski, M
    Berus, T
    Rzeszutek, J
    Sidorchuk, P
    Polit, J
    Sheregii, E
    Szade, J
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) : 164 - 167
  • [7] Pulsed laser deposition of II-VI semiconductor thin films and their layered structures
    Oszwaldowski, M. (maciej.oszwaldowski@put.poznan.pl), 1600, Elsevier Ltd (371): : 1 - 2
  • [8] CRYSTALLINE PHASES OF II-VI COMPOUND SEMICONDUCTORS GROWN BY PULSED-LASER DEPOSITION
    SHEN, WP
    KWOK, HS
    APPLIED PHYSICS LETTERS, 1994, 65 (17) : 2162 - 2164
  • [9] AN ELECTROCHEMICAL STUDY OF CATHODIC DEPOSITION OF II-VI COMPOUND SEMICONDUCTORS
    TSENG, ES
    BASOL, BM
    KAPUR, VK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C114 - C114
  • [10] OPTICALLY BISTABLE THIN-FILM DEVICES USING WIDE-GAP II-VI COMPOUNDS
    EICHLER, HJ
    GLAW, V
    KUMMROW, A
    PENSCHKE, V
    WAHI, A
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 695 - 698