Positive electrodes based on Ion-implanted SrTiO3

被引:0
|
作者
Stoeber, Max [1 ]
Cherkouf, Charaf [2 ]
机构
[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01314 Dresden, Germany
[2] TU Bergakad Freiberg, Inst Expt Phys, Leipziger Str 23, D-09596 Freiberg, Germany
关键词
Ion Implantation; Oxygen Exchange; Oxygen Solid Electrolyte Coloumetry (OSEC); Oxygen Vacancies; Strontium Titanate;
D O I
10.1515/psr-2018-0122
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
An O-2-electrode was fabricated using a metal ion implanted SrTiO3 single crystal. The time resolved oxygen exchange rate of ion implanted strontium titanate (SrTiO3) single crystals was studied by means of oxygen solid electrolyte coulometry (OSEC). Transmission electron microscopy (TEM) was performed in order to determine structural changes after ion implantation. Moreover, theoretical modelling based on defect chemistry under equilibrium conditions was applied for determining of effective rate constants. OSEC measurements turn out to be a damage and calibration free method, which was used for the first time in order to characterize kinetic parameters of oxygen exchange on single crystalline surfaces.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [42] Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001)
    Zhu, XD
    Si, WD
    Xi, XX
    Jiang, QD
    APPLIED PHYSICS LETTERS, 2001, 78 (04) : 460 - 462
  • [43] Ion beam induced epitaxial crystallization of SrTiO3
    Oyoshi, K
    Hishita, S
    Suehara, S
    Aizawa, T
    Haneda, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4): : 184 - 186
  • [44] Precipitation of Au nanoclusters in SrTiO3 by ion implantation
    Wang, CM
    Shutthanandan, V
    Zhang, Y
    Thomas, LE
    Baer, DR
    Thevuthasan, S
    Duscher, G
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) : 5060 - 5068
  • [45] Ionic conduction in the SrTiO3|YSZ|SrTiO3 heterostructure
    De Souza, R. A.
    Ramadan, A. H. H.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2013, 15 (13) : 4505 - 4509
  • [46] Fabrication of SrTiO3 field effect transistors with SrTiO3-S source and drain electrodes
    Sato, Taisuke
    Shibuya, Keisuke
    Ohnishi, Tsuyoshi
    Nishio, Kazunori
    Lippmaa, Mikk
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (20-24): : L515 - L518
  • [47] OXIDATION OF ION-IMPLANTED METALS
    GALERIE, A
    CAILLET, M
    PONS, M
    MATERIALS SCIENCE AND ENGINEERING, 1985, 69 (02): : 329 - 340
  • [48] PROPERTIES OF ION-IMPLANTED ZNSE
    SANTIAGO, JJ
    SHIN, BK
    EHRET, J
    WOODY, WR
    CARRA, WM
    PARK, YS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 381 - 381
  • [49] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [50] ION-IMPLANTED SE IN GAAS
    LIDOW, A
    GIBBONS, JF
    DELINE, VR
    EVANS, CA
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4130 - 4138