ION-IMPLANTED HIGH-FREQUENCY HIGH-SPEED GAAS INTEGRATED-CIRCUITS TECHNOLOGY

被引：2

|

作者：

CHEN, DR

EISEN, FH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 06期

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D O I：

10.1116/1.570340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2054 / 2062

页数：9

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