HIGH-PURITY INP GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY (GSMBE)

被引：19
|
作者：
LAMBERT, M
PERALES, A
VERGNAUD, R
STARCK, C
机构：
[1] Laboratoires de Marcoussis, F-91460 Marcoussis, Route de Nozay
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90345-L
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of high purity indium phosphide by gas source molecular beam epitaxy (GSMBE) using solid indium source and pure phosphine is reported. 77 K mobilities as high as 112,000 cm2/V·s with residual carrier concentrations of 2 × 1014 cm-3 have been obtained. 4.2 K photoluminescence spectra are dominated by free-exciton and neutral donor-exciton transitions. Very weak acceptor related transitions show a low compensation ratio for this sample. © 1990.
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页码：97 / 100
页数：4
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