REDUCED DEVICE DAMAGE USING AN OZONE BASED PHOTORESIST REMOVAL PROCESS

被引：0
|
作者：
GABRIEL, C
MITCHENER, JC
机构：
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING VI | 1989年 / 1086卷
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：598 / 604
页数：7
相关论文
共 50 条
  • [21] Removal of novolac-based photoresist film using low molecular weight alcohols
    Kamal, T
    Hess, DW
    CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING, 2000, 99 (36): : 235 - 242
  • [22] Photoresist removal using low molecular weight alcohols
    Kamal, T
    Hess, DW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (07) : 2749 - 2753
  • [23] Introduction of an innovative water based photoresist stripping process using intelligent fluids
    Rudolph, Matthias
    Thrun, Xaver
    Schumann, Dirk
    Hoehne, Anita
    Esche, Silvio
    Hohle, Christoph
    ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXI, 2014, 9051
  • [24] Effect of Radical Scavenger and UV Irradiation on Removal of Photoresist and BARC using Water/Ozone in Cu/Low-k Interconnect
    Le, Q. T.
    Lux, M.
    Kesters, E.
    Prager, L.
    Vereecke, G.
    CLEANING AND SURFACE CONDITIONING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING 11, 2009, 25 (05): : 71 - 77
  • [25] A forming gas based polymer and photoresist removal process to eliminate oxidation of siloxane spin-on glass
    Cheng, CC
    Burke, R
    Kennedy, J
    Nguyen, D
    Wall, R
    Lowe, B
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESSING, 1996, 96 (12): : 564 - 575
  • [26] Novel Oxygen-based Dry Strip Process Reducing NOx Emissions During Photoresist Removal
    Kim, Ji Seung
    Ryu, Je Hyeok
    Lee, Chiyoung
    Lee, Yun Young
    Kim, Byoung Hoon
    2019 30TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2019,
  • [27] Novel photoresist stripping technology using ozone/vaporized water mixture
    Abe, H
    Iwamoto, H
    Toshima, T
    Iino, T
    Gale, GW
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2003, 16 (03) : 401 - 408
  • [28] Low-k material damage during photoresist ashing process
    Lee, Woohyun
    Kim, Hyuk
    Park, Wanjae
    Kim, Wan-Soo
    Kim, Donghyun
    Kim, Ji-Won
    Cheong, Hee-Woon
    Whang, Ki-Woong
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (17)
  • [29] Effect of additives on the removal efficiency of photoresist by ozone/DI-water processes: Experimental study
    Vankerckhoven, H
    De Smedt, F
    Claes, M
    De Gendt, S
    Heyns, MM
    Vinckier, C
    ULTRA CLEAN PROCESSING OF SILICON SURFACES V, 2003, 92 : 101 - 104
  • [30] Damage of ultralow k materials during photoresist mask stripping process
    Hua, Xuefeng
    Kuo, Ming-shu
    Oehrlein, G. S.
    Lazzeri, P.
    Iacob, E.
    Anderle, M.
    Inoki, C. K.
    Kuan, T. S.
    Jiang, P.
    Wu, Wen-li
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1238 - 1247
12345